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jsp.display-item.identifier=請使用永久網址來引用或連結此文件:
https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/79936
题名:
Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers
作者:
Chang, P. H.
;
Wei, Y. Y.
;
Chen, C. W.
;
Reng, H. C.
;
Ling, D. C.
;
Chen, N. C.
;
Chang, C. A.
贡献者:
淡江大學物理學系
关键词:
61.05.cp
;
68.55.−a
;
73.61.Ey
;
74.78.Db
;
81.05.Ea
;
81.15.Kk
日期:
2008-05-13
上传时间:
2013-01-15 18:20:51 (UTC+8)
出版者:
Wiley
摘要:
Superconductivity and transport characteristics of high-quality wurtzite-structured In- and N-polarity InN thin film on sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) were presented in this study. Single-crystalline InN films with various n-typed carrier concentrations (n = 1 ∼ 6 × 1019cm–3) resulting from nitrogen vacancy (VN) were obtained by changing buffer layers. Superconductivity phase transition at Tc,onset around 3.5 K are observed in both In- and N-polarity InN. This strongly suggest that the superconduc- tivity originate in the In-VN(and/or VN+)-In chain in the a-b plane of InN thin film. Our experimental results show that the nitrogen vacancy in a-b plane of InN thin film must play important roles for the quasi-2D superconducting network in InN system. Temperature - dependent resistance broadening of InN at T < Tc,onset(K) under zero magnetic fields was observed and can be expressed by Kosterlitz-Thouless transition. Details were discussed in this paper. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
關聯:
Physica status solidi (c)5(6), pp.1594-1599
DOI:
10.1002/pssc.200778515
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[物理學系暨研究所] 期刊論文
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