Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers

doi:10.1002/pssc.200778515

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/79936

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題名:	Growth and characterization of InN thin film by metal-organic vcapor phase epitaxy (MOVPE) on different buffers
作者:	Chang, P. H.;Wei, Y. Y.;Chen, C. W.;Reng, H. C.;Ling, D. C.;Chen, N. C.;Chang, C. A.
貢獻者:	淡江大學物理學系
關鍵詞:	61.05.cp;68.55.−a;73.61.Ey;74.78.Db;81.05.Ea;81.15.Kk
日期:	2008-05-13
上傳時間:	2013-01-15 18:20:51 (UTC+8)
出版者:	Wiley
摘要:	Superconductivity and transport characteristics of high-quality wurtzite-structured In- and N-polarity InN thin film on sapphire substrate by metal-organic vapor phase epitaxy (MOVPE) were presented in this study. Single-crystalline InN films with various n-typed carrier concentrations (n = 1 ∼ 6 × 1019cm–3) resulting from nitrogen vacancy (VN) were obtained by changing buffer layers. Superconductivity phase transition at Tc,onset around 3.5 K are observed in both In- and N-polarity InN. This strongly suggest that the superconduc- tivity originate in the In-VN(and/or VN+)-In chain in the a-b plane of InN thin film. Our experimental results show that the nitrogen vacancy in a-b plane of InN thin film must play important roles for the quasi-2D superconducting network in InN system. Temperature - dependent resistance broadening of InN at T < Tc,onset(K) under zero magnetic fields was observed and can be expressed by Kosterlitz-Thouless transition. Details were discussed in this paper. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
關聯:	Physica status solidi (c)5(6), pp.1594-1599
DOI:	10.1002/pssc.200778515
顯示於類別:	[物理學系暨研究所] 期刊論文

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