English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 57531/91049 (63%)
造訪人次 : 13508591      線上人數 : 422
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/78974

    題名: N-ion implantation of micro-nanocrystalline duplex structured diamond films for enhancing their electron field emission properties
    作者: Panda, Kalpataru;Sundaravel, Balakrishanan;Cheng, Hsiu-fung;Horng, Chuang-chi;Chang, Horng-yi;Chen, Huang-chin;Lin, I-nan
    貢獻者: 淡江大學物理學系
    關鍵詞: Composite diamond films;Electron field emission properties;Transmission electron microscopy
    日期: 2012-06
    上傳時間: 2012-11-07 15:40:11 (UTC+8)
    出版者: Elsevier
    摘要: The improvement on the electron field emission (EFE) properties of duplex-structured diamond films by N-ion implantation/post-annealing processes was investigated. The duplex-structured diamond films were synthesized by a two-step microwave plasma enhanced CVD process. Transmission electron microscopy (TEM) examinations reveal that all the as-prepared, N-ion implanted and post-annealed diamond films contained large microcrystalline-diamond (MCD) aggregates sparsely distributed among the matrix of ultra-small diamond grains. While the granular structure of the MCD aggregates was insignificantly modified due to the N-ion implantation/post-annealing processes, that of the UNCD regions was markedly altered. The EFE process for the MCD/UNCD films can be turned on at (E0)MCD/UNCD = 8.21 V/μm, which is even smaller than the E0-field for the UNCD films ((E0)UNCD = 13.34 V/μm). These N-ion implanted/post-annealed diamond films attained an EFE current density of (Je)MCD/UNCD = 0.4 mA/cm2 at an applied field of 20.0 V/μm that is even larger than the Je-value for the UNCD films ((Je)UNCD < 0.05 mA/cm2 at the same applied field). Presumably, the enhanced EFE properties are resulted from the presence of nano-graphites in the small-grain region of MCD/UNCD films that form an interconnected path, facilitating the transport of electrons.
    關聯: Surface and Coatings Technology 228, PP.S331-S335
    DOI: 10.1016/j.surfcoat.2012.05.107
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋