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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/78969


    Title: Bias-enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
    Authors: Teng, Kuang-yau;Chen, Huang-chin;Tzeng, Gaung-chin;Tang, Chen-yau;Cheng, Hsiu-fung;Lin, I-nan
    Contributors: 淡江大學物理學系
    Date: 2012-03
    Issue Date: 2012-11-07 15:00:58 (UTC+8)
    Publisher: College Park: American Institute of Physics(AIP)
    Abstract: The evolution of diamond films in bias-enhanced-nucleation (BEN) and bias-enhanced-growth (BEG) processes was systematically investigated. While the BEN process can efficiently form diamond nuclei on the Si substrates, BEG with large enough applied field (> –400 V) and for sufficiently long periods (>60 min) was needed to develop proper granular structure for the diamond films so as to enhance the electron field emission (EFE) properties of the films. For the films BEG under -400 V for 60 min (after BEN for 10 min), the EFE process can be turned on at a field as small as 3.6 V/μm, attaining a EFE current density as large as 325 μA/cm2 at an applied field of 15 V/μm. Such an EFE behavior is even better than that of the ultrananocrystalline diamond films grown in CH4/Ar plasma. Transmission electron microscopic examination reveals that the prime factor enhancing the EFE properties of these films is the induction of the nano-graphite filaments along the thickness of the films that facilitates the transport of electrons through the films.
    Relation: Journal of Applied Physics 111(5), 053701(10pages)
    DOI: 10.1063/1.3687918
    Appears in Collections:[物理學系暨研究所] 期刊論文

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