English  |  正體中文  |  简体中文  |  Items with full text/Total items : 52359/87459 (60%)
Visitors : 9140458      Online Users : 222
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/78775

    Title: TiO2-SnO2:F interfacial electronic structure investigated by soft x-ray absorption spectroscopy
    Authors: Kronawitter, Coleman X.;Kapilashrami, Mukes;Bakke, Jonathan R.;Bent, S.F.;Chuang, Cheng-hao;Pong, Way-faung;Guo, J.;Vayssieres, L.;Mao, S.S.
    Contributors: 淡江大學物理學系
    Date: 2012-03
    Issue Date: 2012-10-22 10:36:26 (UTC+8)
    Publisher: College Park: American Physical Society
    Abstract: The electronic structure of the titanium dioxide (TiO2)-fluorine-doped tin dioxide (SnO2:F) interface is investigated by soft x-ray absorption spectroscopy using synchrotron radiation. The measurements probe the site- and symmetry-selected unoccupied density of states and reflect the interaction between an early transition-metal-oxide (d0) semiconductor and a post-transition-metal-oxide (d10) degenerate semiconductor. The distinct interfacial electronic structure of TiO2-SnO2:F is established by contrasting spectra with those for anatase and rutile TiO2, SnO2:F, and ZnO-SnO2:F and CdO-SnO2:F interfaces. Oxygen 1s absorption spectra, which relate to the O 2p partial density of states of the conduction band, indicate that the interface is associated with a reduction in Ti d-O p orbital hybridization and an alteration of the TiO2 crystal field. These observations are consistent with measured titanium 2p absorption spectra, which in addition provide evidence for distortion of long-range order around the cation site in the interfacial TiO2. The TiO2-SnO2:F interface is a functional component of a number of optoelectronic devices, perhaps most notably within the anode structure of solar cell architectures. In nonequilibrium conditions, such as those found in operating solar cells, interfacial electronic structure directly influences performance by modifying, for instance, the quasi-Fermi level electrons and the potential distribution at the transparent electrode.
    Relation: Physical Review B 85(12), pp.125109(7pages)
    DOI: 10.1103/PhysRevB.85.125109
    Appears in Collections:[物理學系暨研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    1550-235X_85(12)p125109(7pages).pdf611KbAdobe PDF283View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback