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    題名: 電化學技術分析於矽通孔中之銅電沉積行為
    其他題名: Electrochemical analysis of copper electrodeposition for through-siliconvia filling
    作者: 呂宛儒;Lu, Wan-Ru
    貢獻者: 淡江大學化學工程與材料工程學系碩士班
    蔡子萱;Tsai, Tzu-Hsuan
    關鍵詞: ;矽通孔;電化學沉積;交流阻抗;極化曲線;Copper;through-silicon via;electrodeposition;impedance, polarization curve
    日期: 2012
    上傳時間: 2012-06-21 06:44:18 (UTC+8)
    摘要: 矽通孔的製作是目前三維晶片製程中的關鍵技術,本研究主要是利用旋轉盤電極電化學技術預測矽通孔的鍍銅程序。實驗上,控制旋轉盤電極的轉速以產生不同邊界層厚度來代表孔洞表面、孔洞淺處、孔洞深處的鍍銅情形,並利用極化曲線與交流阻抗分析等方法,探討溫度、鍍液組成、超音波震盪等對銅沉積行為的影響。實驗結果發現,適當的銅離子濃度或硫酸濃度較有利於底填鍍銅;具抑制鍍銅作用的中聚乙二醇(PEG)和具促進鍍銅作用的聚二硫二丙烷磺酸鈉(SPS)均會吸附在電極表面,其中PEG的吸附作用對邊界層較厚的表面,吸附效果差,但是SPS則無對邊界層厚度的敏感性。另外,溫度升高或輔以超音波震盪並無法促進底填鍍銅的效果,反而會使添加劑不易吸附於表面,而造成孔洞產生。最後,以本系統研究預浸泡和鍍液壽命對鍍銅的影響,發現預浸泡的時間增加或鍍液久置均對矽通孔鍍銅的填孔能力有不利的影響。
    Copper electrodeposition in through silicon via (TSV) is the key technology for the development of three-dimensional integrated circuits. This study uses rotating disk electrode (RDE) to predict the copper electrodeposition in TSV. For this experiment, potentiodynamic scans and impedance plots of RDE are applied to simulate the different mass-transfer environments within the via, and the effects of temperature, the composition of plating bath, and ultrasonic agitation etc. on copper electrodeposition are investigated. The experimental results indicate that only at the optimum concentrations of Cu2+and sulfuric acid would be helpful for bottom-up filling. The organic additives would adsorb on the electrode surface. The adsorption of polyethylene glycol decreased with the thickness of boundary layer increasing, but bis(3-sulfopropyl) disulfide was not sensitive to the boundary layer. In addition, the increased temperature or the application of ultrasonic agitation destroyed the adsorption of the organic additives and would be unfavorable to TSV filling. The experimental results about the predip time and bath life show the increased predip time would not improve TSV filling and the bath would decay to weaken the action of the additives on TSV filling.
    顯示於類別:[化學工程與材料工程學系暨研究所] 學位論文

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