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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/77369

    Title: 以ITO基板生長CdSSe量子點之研究
    Other Titles: The study of the CdSSe quantum dots on ITO substrate
    Authors: 游志鴻;Yu, Chih-Hing
    Contributors: 淡江大學物理學系碩士班
    鄭振益;Jen, Jen-Yi
    Keywords: 硒硫鎘;發光;熱壁式磊晶;CdSSe;photoluminescene;Hot Wall Epitaxy
    Date: 2012
    Issue Date: 2012-06-21 06:37:35 (UTC+8)
    Abstract: 本論文主要內容是以ITO作為間隔層在玻璃基板上生長埋入式CdSSe量子點,以及觀察熱退火對其發光的影響。實驗內容包含觀察熱退火對ITO、CdSSe量子點之影響,並討論此過程,除此之外並觀察ITO對CdSSe量子點的最佳覆蓋率,進而作成三層量子點樣品,然後對其做光譜量測,其中CdSe量子點的光譜呈現藍位移現象,這跟量子點的尺寸有關,另外我們已可在室溫下觀察到CdSSe量子點的發光。
    We used the ITO film as the buffer layer to grow CdSSe quantum dots on glass substrate. And we also observed the annealing effects on CdSSe quantum dots light emitting. The first of all , we changed the thermal annealing temperature and time to find out the best process condition. Then we used the ITO as the capped layer to cover the CdSSe quantum dots. We can use the AFM to find out the best coverage of ITO.At last we observed the photoluminescence of ITO/CdSSe/ITO/glass heterostructure. Because of lattice dialation ,the photoluminescence of CdSe quantum dots has blue shift.
    Appears in Collections:[物理學系暨研究所] 學位論文

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