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    Title: Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes
    Authors: Joseph, P.T.;Tai, N.H.;Chen, C.H.;Niu, H.;Cheng, H.F.;Palnitkar, U.A.;Lin, I.N.
    Contributors: 淡江大學物理學系
    Date: 2009-06
    Issue Date: 2012-06-14 09:23:53 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: The single or multienergy nitrogen (N) ion implantation (MENII) processes with a dose (4×1014 ions/cm2) just below the critical dose (1×1015 ions/cm2) for the structural transformation of ultrananocrystalline diamond (UNCD) films were observed to significantly improve the electron field emission (EFE) properties. The single energy N ion implantation at 300 °C has shown better field emission properties with turn-on field (E0) of 7.1 V/μm, as compared to room temperature implanted sample at similar conditions (E0 = 8.0 V/μm) or the pristine UNCD film (E0 = 13.9 V/μm). On the other hand, the MENII with a specific sequence of implantation pronouncedly showed different effect on altering the EFE properties for UNCD films, and the implantation at 300 °C further enhanced the EFE behavior. The best EFE characteristics achieved for the UNCD film treated with the implantation process are E0 = 4.5 V/μm and current density of (Je) = 2.0 mA/cm2 (at 24.5 V/μm). The prime factors for improving the EFE properties are presumed to be the grain boundary incorporation and activation of the implanted N and the healing of induced defects, which are explained based on surface charge transfer doping mechanism.
    Relation: Journal of Applied Physics 105(12), 123710(7pages)
    DOI: 10.1063/1.3152790
    Appears in Collections:[物理學系暨研究所] 期刊論文

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