淡江大學機構典藏:Item 987654321/76950
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    題名: Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor
    作者: Chen, Chun-Nan;Chang, Sheng-Hsiung;Su, Wei-Long;Jen, Jen-Yi;Li, Yiming
    貢獻者: 淡江大學物理學系
    日期: 2012-09
    上傳時間: 2013-08-08 14:42:36 (UTC+8)
    出版者: Moscow: MAIK Nauka - Interperiodica
    摘要: In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.
    關聯: Semiconductors 46(9), pp.1126-1134
    DOI: 10.1134/S1063782612090060
    顯示於類別:[物理學系暨研究所] 期刊論文

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