Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/76950

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题名:	Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor
作者:	Chen, Chun-Nan;Chang, Sheng-Hsiung;Su, Wei-Long;Jen, Jen-Yi;Li, Yiming
贡献者:	淡江大學物理學系
日期:	2012-09
上传时间:	2013-08-08 14:42:36 (UTC+8)
出版者:	Moscow: MAIK Nauka - Interperiodica
摘要:	In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.
關聯:	Semiconductors 46(9), pp.1126-1134
DOI:	10.1134/S1063782612090060
显示于类别:	[物理學系暨研究所] 期刊論文

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