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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/76950

    Title: Velocity-Direction Dependent Transmission Coefficient of Electron Through Potential Barrier Grown on Anisotropic Semiconductor
    Authors: Chen, Chun-Nan;Chang, Sheng-Hsiung;Su, Wei-Long;Jen, Jen-Yi;Li, Yiming
    Contributors: 淡江大學物理學系
    Date: 2012-09
    Issue Date: 2013-08-08 14:42:36 (UTC+8)
    Publisher: Moscow: MAIK Nauka - Interperiodica
    Abstract: In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.
    Relation: Semiconductors 46(9), pp.1126-1134
    DOI: 10.1134/S1063782612090060
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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