Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaN Wurtzite Materials

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题名:	Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-Splitting Calculations for GaN Wurtzite Materials
作者:	Chen, Chun-Nan;Chang, Sheng-Hsiung;Su, Wei-Long;Wang, Wan-Tsang;Kao, Hsiu-Fen;Jen Jen-Yi;Li, Yiming
贡献者:	淡江大學物理學系
关键词:	Spin splitting;Inversion asymmetry;GaN;Dresselhaus;Wurtzite
日期:	2012-02
上传时间:	2012-05-22 10:11:04 (UTC+8)
出版者:	Seoul: The Korean Physical Society
摘要:	The bulk inversion asymmetry (Dresselhaus) terms (i.e., B 2, B 1, and B′1 terms) of wurtzite materials are determined. The 2 × 2 conduction band, 2 × 2 heavy-hole band, 2 × 2 light-hole band, and 2 × 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 × 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.
關聯:	Journal of the Korean Physical Society 60(3), pp.403-409
DOI:	10.3938/jkps.60.403
显示于类别:	[物理學系暨研究所] 期刊論文

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