半導體量子傳輸之理論計算與模擬

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 研究報告 > Item 987654321/76181

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題名:	半導體量子傳輸之理論計算與模擬
其他題名:	Theoretical Calculation and Simulation on Semiconductor Quantum Transport
作者:	陳俊男
貢獻者:	淡江大學物理學系
關鍵詞:	Quantum transport;Non-equilibrium Green’s functions;Nanoelectronics;sp3d5s* tight-binding;Antibonding orbital model
日期:	2011
上傳時間:	2012-05-03 20:13:01 (UTC+8)
摘要:	當矽材質場效電晶體逐漸接近它的尺度極限時，許多奈米尺度的結構因之而被廣泛的研究。因此，必須要包含量子效應的程式模擬工具才符合需要。本計劃『將建立的』理論模型是建基於非平衡格林函數(NEFG)架構而使用鍵結軌道方法與sp3d5s能帶緊束方法。本計劃將建立的為一種嚴謹且實用的近似法，此方法可去模擬奈米尺度電子元件之量子傳輸現象。本計劃採用鍵結軌道方法與sp3d5s 能帶緊束方法當成能帶計算工具，原因是：(1) 它包含整體能帶效應，(2)它使用原子格子點(grid)，(3)它可很直接的應用於奈米結構半導體電子元件。 As the conventional silicon MOSFET approaches its scaling limits, many nano-scale structures are being extensively explored. Therefore, it will require the simulation tools to include quantum effects to study devices in this region. Our theoretical model, which will be built up in this project, is based on the non-equilibrium Green’s function (NEFG) framework using antibonding orbital model and sp3d5s* tight-binding method. This project sets up a rigorous yet practical approach, which could be suitable to model quantum transport in nano-scale electronic devices. Moreover, the antibonding orbital model and sp3d5s* tight-binding method is chosen as bandstructure model because (1) it reproduce the whole bandstructure effect, (2) it uses an atomic grid, and (3) its extension to nanostructures is straightforward. Therefore, a three-dimensional full band simulator for nanoelectronics is then presented in this project.
顯示於類別:	[物理學系暨研究所] 研究報告

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