Absorption-edge anisotropy of Cu2ZnSiQ4 (Q=S, Se) quaternary compound semiconductors

doi:10.1016/j.jallcom.2011.01.169

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/74868

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題名:	Absorption-edge anisotropy of Cu2ZnSiQ4 (Q=S, Se) quaternary compound semiconductors
作者:	Levcencoa, S.;Dumcencoa, D.;Huang, Y. S.;Arushanov, E.;Tezlevan, V.;Tiong, K. K.;Du, C. H.
貢獻者:	淡江大學物理學系
關鍵詞:	Semiconductors;Optical properties;Optical spectroscopy
日期:	2011-04-01
上傳時間:	2012-02-09 17:22:32 (UTC+8)
出版者:	Amsterdam: Elsevier BV
摘要:	Polarization-dependent absorption characterization of Cu2ZnSiQ4 (Q = S, Se) quaternary single crystal compound semiconductors were carried out in the temperature range of 10–300 K. The absorption measurements were performed on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. A significant shift towards lower energy was observed in the absorption spectra of E⊥c polarization with respect to those corresponding to E⊥c polarization. A comprehensive analysis of the absorption spectra revealed that the absorption edges of the studied crystals are indirect allowed transitions. A schematic representation of the plausible assignments for the observed near band edge optical transitions for Cu2ZnSiQ4 was proposed. The variation of the indirect transition energies with temperature were analyzed by Varshni and Bose–Einstein expressions. The parameters that describe the temperature dependence of the indirect transition energies with different polarizations were evaluated and discussed.
關聯:	Journal of Alloys and Compounds 509(15), pp.4924–4928
DOI:	10.1016/j.jallcom.2011.01.169
顯示於類別:	[物理學系暨研究所] 期刊論文

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