淡江大學機構典藏:Item 987654321/74866
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 62805/95882 (66%)
造訪人次 : 3944312      線上人數 : 687
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧：
  • 您可在西文檢索詞彙前後加上"雙引號"，以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋，建議至進階搜尋限定作者欄位，可獲得較完整資料
    •  進階搜尋


    請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/74866


    題名: Near band edge anisotropic optical transitions in wide band gap semiconductor Cu2ZnSiS4
    作者: Levcenco, S.;Dumcenco, D.;Huang, Y. S.;Arushanov, E.;Tezlevan, V.;Tiong, K. K.;Du, C. H.
    貢獻者: 淡江大學物理學系
    日期: 2010-10
    上傳時間: 2012-02-09 17:18:12 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: In this study, anisotropic near band edge transitions of Cu2ZnSiS4 single crystals grown by chemical vapor transport were characterized by using polarization-dependent absorption, piezoreflectance (PzR) and surface photovoltage (SPV) spectroscopy techniques at room temperature. The measurements were carried out on the as grown basal plane with the normal along [2 1 0] and the axis c parallel to the long edge of the crystal platelet. Analysis of absorption and SPV spectra reveal indirect allowed transitions for the absorption edge of Cu2ZnSiS4. The estimated values of indirect band gap are 2.97 eV and 3.07 eV, respectively, for E⊥c and E∥c polarization configurations. The polarization-dependent PzR and SPV spectra in the vicinity of the direct band gap of Cu2ZnSiS4 reveal features E⊥ex and E∥ex at around 3.32 eV and 3.41 eV for E⊥c and E∥c polarizations, respectively. Both features E⊥ex and E∥ex are associated with the interband excitonic transitions at point Γ and can be explained by crystal-field splitting of valence band. Based on the experimental observations, a plausible band structure near band edge of Cu2ZnSiS4 is proposed.
    關聯: Journal of Applied Physics 108(7), 073508(5pages)
    DOI: 10.1063/1.3490219
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html館藏資訊0KbHTML190檢視/開啟
    index.html0KbHTML133檢視/開啟
    Near band edge anisotropic optical transitions in wide band gap semiconductor Cu2ZnSiS4.pdf309KbAdobe PDF579檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋