English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 49378/84106 (59%)
造訪人次 : 7377765      線上人數 : 72
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/74862


    題名: The operating mechanism of Schottky-gate nanosensors
    作者: Lee, Yun-ju;Tung, Hsien-chin;Wu, Wen-wei;Yeh, Ping-hung
    貢獻者: 淡江大學物理學系
    關鍵詞: Schottky contact;Zinc oxide;nanowire and sensor
    日期: 2011-06-22
    上傳時間: 2012-02-09 15:55:38 (UTC+8)
    出版者: IEEE Electron Devices Society
    摘要: The highly sensitive nanowire-based Schottky-gate nanosensors for detecting UV, bio-molecules, and gas sensing were demonstrated. The operating mechanism of the Schottky-gate nanosensors is totally distinct from the conventional Ohmic contacted nanosensors. The Schottky-gated device (SGD) has a few merits in comparison to the conventional Ohmic contacted device (OCD). First, it needs no bio-probe to detect molecules; rather, it depends on the absorption of the charged molecules to the junction region. Second, as for the same type of nanowires, such as ZnO, the sensitivity of the SGD is much higher than that of OCD, because a few molecules at the junction region can change the “gate” that effectively tunes the conductance. This Schottky-gate-modulation based sensing principle can be applied to other materials and sensing systems.
    關聯: 2011 IEEE 4th International Nanoelectronics Conference(INEC), Tao-Yuan, Taiwan, 1, pp.29-32
    DOI: 10.1109/INEC.2011.5991751
    顯示於類別:[物理學系暨研究所] 會議論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML152檢視/開啟
    The operating mechanism of Schottky-gate nanosensors.pdf全文檔263KbAdobe PDF256檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋