淡江大學機構典藏:Item 987654321/74848
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/74848


    Title: Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
    Authors: Chen, Sheng-Yu;Yeh, Ping-Hung;Wu, Wen-Wei;Chen, Uei-Shin;Chueh, Yu-Lun;Yang, Yu-Chen;Gwo, Shangir;Chen, Lih-Juann
    Contributors: 淡江大學物理學系
    Keywords: nickel silicide;nanowires;low resistivity;high aspect ratio;epitaxy;nanoelectronic devices
    Date: 2011-01-01
    Issue Date: 2012-02-09 14:59:24 (UTC+8)
    Publisher: Washington, DC: American Chemical Society
    Abstract: One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi2, which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.
    Relation: ACS Nano 5(11), pp.9202–9207
    DOI: 10.1021/nn203445p
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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