淡江大學機構典藏:Item 987654321/74843
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62797/95867 (66%)
造访人次 : 3731953      在线人数 : 533
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/74843


    题名: Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties
    作者: Wu, W. W.;Lu, K. C.;Chen, K. N.;Yeh, Ping-Hung;Wang, C. W.;Lin, Y. C.;Huang, Yu
    贡献者: 淡江大學物理學系
    日期: 2010-11
    上传时间: 2012-02-09 14:44:49 (UTC+8)
    出版者: College Park: American Institute of Physics
    摘要: Unusually large and compressively strained Si in nanoheterostructures of Ni silicide/Si/Ni silicide, in which the strain of the Si region can be achieved up to 10%, has been produced with point contact reactions between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The growth rate and relationships between the strain and the spacing of the Si region have been measured. Based on the rate and relationships, we can control the Si dimension and, in turn, the strain of remaining Si can be tuned with appropriate spacing. Since one-dimensional nanoheterostructures may have potential applications in nanoelectronic devices, the existent strain will further affect carrier mobility and piezoresistance coefficients in the Si region. Electrical measurements on the nanodevices from such nanoheterostructures show that the current output closely correlates with the Si channel length and compressive strain.
    關聯: Applied Physics Letters 97(20), 203110(3pages)
    DOI: 10.1063/1.3515421
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    0003-6951_97(20)p203110.pdf949KbAdobe PDF427检视/开启
    index.html0KbHTML306检视/开启
    index.html館藏資訊0KbHTML207检视/开启
    index.html0KbHTML199检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈