淡江大學機構典藏:Item 987654321/74841
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    Title: Supersensitive, Fast-Response Nanowire Sensors by Using Schottky Contacts
    Authors: Hu, Youfan;Zhou, Jun;Yeh, Ping-Hung;Li, Zhou;Wei, Te-Yu;Wang, Zhong-Lin
    Contributors: 淡江大學物理學系
    Keywords: Nanowires;Sensors;Schottky contact;Semiconductors
    Date: 2010-10
    Issue Date: 2012-02-09 14:38:14 (UTC+8)
    Publisher: Weinheim: Wiley - V C H Verlag GmbH & Co. KGaA
    Abstract: A Schottky barrier can be formed at the interface between a metal electrode and a semiconductor. The current passing through the metal-semiconductor contact is mainly controlled by the barrier height and barrier width. In conventional nanodevices, Schottky contacts are usually avoided in order to enhance the contribution made by the nanowires or nanotubes to the detected signal. We present a key idea of using the Schottky contact to achieve supersensitive and fast response nanowire-based nanosensors. We have illustrated this idea on several platforms: UV sensors, biosensors, and gas sensors. The gigantic enhancement in sensitivity of up to 5 orders of magnitude shows that an effective usage of the Schottky contact can be very beneficial to the sensitivity of nanosensors.
    Relation: Advanced Materials 22(30), pp.3327–3332
    DOI: 10.1002/adma.201000278
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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