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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/74834


    Title: Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress
    Authors: Kuo, Y. J.;Chang, T. C.;葉炳宏;Yeh, P. H.;Chen, S. C.;Dai, C. H.;Chao, C. H.;Young, T. F.;Cheng, Osbert;Huan, C. T.
    Contributors: 淡江大學物理學系
    Keywords: Strained silicon;Uniaxial stress;MOSFETs;Impact ionization;Substrate current
    Date: 2009-01
    Issue Date: 2012-02-09 14:12:43 (UTC+8)
    Publisher: Elsevier
    Relation: Thin Solid Films 515(5), pp.1715–1718
    DOI: 10.1016/j.tsf.2008.09.031
    Appears in Collections:[物理學系暨研究所] 期刊論文

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