淡江大學機構典藏:Item 987654321/74833
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    题名: Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance
    作者: Levcenco, S.;Dumcenco, D.;Huang, Y. S.;Arushanov, E.;Tezlevan, V.;Tiong, K. K.;Du, C. H.
    贡献者: 淡江大學物理學系
    关键词: Semiconductors;Crystal growth;Optical properties;Optical spectroscopy
    日期: 2010-09-01
    上传时间: 2012-02-09 11:41:34 (UTC+8)
    出版者: Amsterdam: Elsevier BV
    摘要: The temperature dependence of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals were characterized by using polarization-dependent piezoreflectance (PzR) in the temperature range of 10–300 K. The PzR measurements were carried out on the as-grown basal plane with the normal along [2 1 0] and the c axis parallel to the long edge of the crystal platelet. The PzR spectra revealed polarization-dependent and features for E⊥c and Е||c polarization, respectively. Both and features are associated with the interband excitonic transitions at Γ point and can be explained by crystal-field splitting of valence band. From a detailed lineshape fit to the PzR spectra, the temperature dependence of the transition energies and broadening parameters of the band-edge excitons were determined accurately. The temperature dependence of near band-edge excitonic transition energies were analyzed using Varshni and Bose–Einstein expressions. The temperature dependence of the broadening parameter of excitonic features also has been studied in terms of a Bose–Einstein equation that contains the electron (exciton)–longitudinal optical phonon-coupling constant. The parameters that describe the temperature variation of the excitonic transition energies and broadening parameters were evaluated and discussed.
    關聯: Journal of Alloys and Compounds 506(1), pp.46–50
    DOI: 10.1016/j.jallcom.2010.07.027
    显示于类别:[物理學系暨研究所] 期刊論文

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