English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62805/95882 (66%)
Visitors : 3987720      Online Users : 607
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version
    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/74833

    Title: Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization-dependent piezoreflectance
    Authors: Levcenco, S.;Dumcenco, D.;Huang, Y. S.;Arushanov, E.;Tezlevan, V.;Tiong, K. K.;Du, C. H.
    Contributors: 淡江大學物理學系
    Keywords: Semiconductors;Crystal growth;Optical properties;Optical spectroscopy
    Date: 2010-09-01
    Issue Date: 2012-02-09 11:41:34 (UTC+8)
    Publisher: Amsterdam: Elsevier BV
    Abstract: The temperature dependence of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals were characterized by using polarization-dependent piezoreflectance (PzR) in the temperature range of 10–300 K. The PzR measurements were carried out on the as-grown basal plane with the normal along [2 1 0] and the c axis parallel to the long edge of the crystal platelet. The PzR spectra revealed polarization-dependent and features for E⊥c and Е||c polarization, respectively. Both and features are associated with the interband excitonic transitions at Γ point and can be explained by crystal-field splitting of valence band. From a detailed lineshape fit to the PzR spectra, the temperature dependence of the transition energies and broadening parameters of the band-edge excitons were determined accurately. The temperature dependence of near band-edge excitonic transition energies were analyzed using Varshni and Bose–Einstein expressions. The temperature dependence of the broadening parameter of excitonic features also has been studied in terms of a Bose–Einstein equation that contains the electron (exciton)–longitudinal optical phonon-coupling constant. The parameters that describe the temperature variation of the excitonic transition energies and broadening parameters were evaluated and discussed.
    Relation: Journal of Alloys and Compounds 506(1), pp.46–50
    DOI: 10.1016/j.jallcom.2010.07.027
    Appears in Collections:[物理學系暨研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat
    Temperature-dependent study of the band-edge excitonic transitions of Cu2ZnSiS4 single crystals by polarization dependent piezoreflectance.pdf208KbAdobe PDF799View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback