淡江大學機構典藏:Item 987654321/73507
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    题名: Modification on the Microstructure of Ultrananocrystalline Diamond Films for Enhancing Their Electron Field Emission Properties via a Two-Step Microwave Plasma Enhanced Chemical Vapor Deposition Process
    作者: Cheng, Hsiu-fung;Horng, Chuang-chi;Chiang, Horng-yi;Chen, Huang-chin;Lin, I-nan
    贡献者: 淡江大學物理學系
    日期: 2011-07-21
    上传时间: 2011-10-25 13:33:22 (UTC+8)
    出版者: Washington: American Chemical Society
    摘要: The electron field emission (EFE) properties of microcrystalline diamond (MCD) films were markedly improved by using ultrananocrystalline diamond (UNCD) films as the nucleation layer. Thus formed MCD/UNCD composite films possess a low turn-on field ((E0)MCD/UNCD = 10.3 V/μm), which is even smaller than that for the underlying UNCD films ((E0)UNCD = 14.7 V/μm). However, the extent of the enhancement on EFE behavior of the MCD/UNCD films is strongly influenced by the characteristics of the UNCD nucleation layer. The improvement on EFE behavior of MCD/UNCD films is large when the UNCD nucleation layer was grown in H2-free Ar plasma (CH4/Ar/H2 (0%) = 2/98/0) and is small when the UNCD layer was grown in H2-containing Ar plasma (CH4/Ar/H2 (3%) = 2/95/3). Transmission electron microscopy (TEM) examinations reveal that, while both films contain large-grain and ultrasmall grain duplex microstructure, only the former contain nanographites, locating along the interface of large-grain and ultrasmall grain regions. Presumably, the nanographites form an interconnected path that improved the transport of electrons and markedly enhanced the EFE properties of the MCD/UNCD composite films.
    關聯: Journal of Physical Chemistry C 115(28), pp.13894-13900
    DOI: 10.1021/jp112131a
    显示于类别:[物理學系暨研究所] 期刊論文

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