淡江大學機構典藏:Item 987654321/73502
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 62830/95882 (66%)
Visitors : 4033817      Online Users : 974
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
    •  Adv. Search
    Home ‧ Login ‧ Upload ‧ Help ‧ About ‧ Administer Goto mobile version


    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/73502


    Title: Nanocrystalline diamond microstructures from Ar/H2/CH4-plasma chemical vapour deposition
    Authors: Lin, I-Nan;Chen, Huang-Chin;Wang, Chuang-Shern;Lee, Yun-Rue;Lee, Chi-Young
    Contributors: 淡江大學物理學系
    Date: 2011
    Issue Date: 2011-10-25 13:20:35 (UTC+8)
    Publisher: Cambridge: R S C Publications
    Abstract: The incorporation of H2 into Ar plasma was observed to markedly alter the microstructure of diamond films. The addition of a small percentage of H2 (<1.5%) into the Ar plasma leads to the presence of stacking faults in plate-like diamond grains, the incorporation of 75% H2 induces the formation of the diamond polymorph (8H). Optical emission spectroscopy indicated that addition of H2 into the Ar/CH4 plasma decreased the CH/C2 ratio and increased the proportion of atomic hydrogen. The small proportion of atomic hydrogen in 1.5%H2–Ar plasma can only induce the formation of (111) stacking faults, resulting in scarcely distributed plate-like diamond grains. The large proportion of atomic hydrogen in 75%H2–Ar plasma causes the rapid growth of diamond grains, leading to the formation of polymorphs of diamond lattices. The tuning on the microstructure of the UNCD films by incorporating either small or large amounts of H2 in Ar-plasma can be attributed to the interaction of H-species with the grain boundary hydrocarbons. Such a capability opens up the potential for applications of UNCD films. Despite the complication in granular structure resulted from the CH4/(Ar–H2) plasma chemical vapour deposition, the formation of microstructures can be explained by the same pathway, the competition of the processes (i) formation of a hydrocarbon passivation layer and the re-activation of the hydrocarbon layer and (ii) secondary nucleation and the enlargement of diamond grains.
    Relation: CrystEngComm 13(20), pp.6082-6089
    DOI: 10.1039/C1CE05517H
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

    Files in This Item:

    File Description SizeFormat
    1466-8033_13(20)p6082-6089.pdf905KbAdobe PDF636View/Open
    index.html0KbHTML336View/Open

    All items in 機構典藏 are protected by copyright, with all rights reserved.

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - Feedback