A Novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72750

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題名:	A Novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
作者:	Yeh, P.H.;Peng, D.Z.;Chang, T.C.;Liu, C.F.
貢獻者:	淡江大學物理學系
日期:	2002-11
上傳時間:	2011-10-24 11:06:41 (UTC+8)
摘要:	A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550°C. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.
關聯:	Japanese Journal of Applied Physics 42, pp.1164-1167
DOI:	10.1143/JJAP.42.1164
顯示於類別:	[物理學系暨研究所] 期刊論文

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