English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 49983/85139 (59%)
造訪人次 : 7793338      線上人數 : 42
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72750

    題名: A Novel SiGe raised source/drain polycrystalline silicon thin-film transistor with improved on-current and larger breakdown voltage
    作者: Yeh, P.H.;Peng, D.Z.;Chang, T.C.;Liu, C.F.
    貢獻者: 淡江大學物理學系
    日期: 2002-11
    上傳時間: 2011-10-24 11:06:41 (UTC+8)
    摘要: A novel poly-Si thin-film transistor with a self-aligned SiGe raised source/drain (SiGe-RSD TFT) has been proposed and fabricated. The SiGe-RSD regions were grown selectively by the ultra-high vacuum chemical vapor deposition (UHVCVD) process designed by us at 550°C. The resultant transistor structure features an ultra-thin active channel region (20 nm) and a self-aligned thick source/drain region (120 nm), and is ideally suited for optimum performance. Significant improvements in electrical characteristics, such as higher turn-on current, lower leakage current and higher drain breakdown voltage have been observed in the SiGe RSD TFT, compared to its conventional TFT counterpart. Moreover, the process is simple and no additional masks are necessary, which is consistent with conventional fabrication processes.
    關聯: Japanese Journal of Applied Physics 42, pp.1164-1167
    顯示於類別:[物理學系暨研究所] 期刊論文


    檔案 描述 大小格式瀏覽次數
    A Novel SiGe raised source drain polycrystalline silicon thin film transistor with improved on-current and larger breakdown voltage.pdf251KbAdobe PDF2檢視/開啟



    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋