淡江大學機構典藏:Item 987654321/72745
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 59108/92571 (64%)
造訪人次 : 735480      線上人數 : 35
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72745


    題名: Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
    作者: Yeh, P.H.;Yu, C.H.;Chen, L.J.
    貢獻者: 淡江大學物理學系
    關鍵詞: Doping species effect;Metal-induced crystallization;Current-induced crystallization
    日期: 2005-07
    上傳時間: 2011-10-24 11:05:47 (UTC+8)
    摘要: The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30 keV View the MathML source or As+ to a dose of 3 × 1015 ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on View the MathML source, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing.
    關聯: Nuclear Instruments and Methods in Physics Research Section B 237, pp.167-173
    DOI: 10.1016/j.nimb.2005.04.092
    顯示於類別:[物理學系暨研究所] 期刊論文

    文件中的檔案:

    檔案 大小格式瀏覽次數
    index.html0KbHTML77檢視/開啟

    在機構典藏中所有的資料項目都受到原著作權保護.

    TAIR相關文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋