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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72745

    Title: Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
    Authors: Yeh, P.H.;Yu, C.H.;Chen, L.J.
    Contributors: 淡江大學物理學系
    Keywords: Doping species effect;Metal-induced crystallization;Current-induced crystallization
    Date: 2005-07
    Issue Date: 2011-10-24 11:05:47 (UTC+8)
    Abstract: The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30 keV View the MathML source or As+ to a dose of 3 × 1015 ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on View the MathML source, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing.
    Relation: Nuclear Instruments and Methods in Physics Research Section B 237, pp.167-173
    DOI: 10.1016/j.nimb.2005.04.092
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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