Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72688

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題名:	Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide
作者:	Hsueh, H.C.
貢獻者:	淡江大學物理學系
日期:	1995-07
上傳時間:	2011-10-24 10:54:39 (UTC+8)
摘要:	A combination of high-sensitivity Raman scattering and ab initio computer simulations is used to explore the lattice dynamics of the prototypical layered semiconductor GeS under hydrostatic pressure. The observed and calculated pressure responses of the Ag layer shear mode are in excellent agreement over the entire pressure range of the experiments (0 to 50 kbar). Examination of the calculated phonon eigenvectors reveals that the "rigid-layer" model is an appropriate description of the lattice dynamics only under near-ambient-pressure conditions and that substantial mode admixture occurs under compression.
關聯:	Europhysics letters 31, pp.151
DOI:	10.1209/0295-5075/31/3/005
顯示於類別:	[物理學系暨研究所] 期刊論文

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