Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72688

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/72688

题名:	Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure : application to germanium sulfide
作者:	Hsueh, H.C.
贡献者:	淡江大學物理學系
日期:	1995-07
上传时间:	2011-10-24 10:54:39 (UTC+8)
摘要:	A combination of high-sensitivity Raman scattering and ab initio computer simulations is used to explore the lattice dynamics of the prototypical layered semiconductor GeS under hydrostatic pressure. The observed and calculated pressure responses of the Ag layer shear mode are in excellent agreement over the entire pressure range of the experiments (0 to 50 kbar). Examination of the calculated phonon eigenvectors reveals that the "rigid-layer" model is an appropriate description of the lattice dynamics only under near-ambient-pressure conditions and that substantial mode admixture occurs under compression.
關聯:	Europhysics letters 31, pp.151
DOI:	10.1209/0295-5075/31/3/005
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
Breakdown of Rigid-Unit vibrations in layered semiconductors under pressure application to germanium sulfide.pdf		492Kb	Adobe PDF	2	检视/开启
index.html	館藏資訊	0Kb	HTML	184	检视/开启
index.html		0Kb	HTML	195	检视/开启
index.html		0Kb	HTML	164	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章