Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72654

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題名:	Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
作者:	Yeh, P.H.;Wu, H.H.;Yu, C.H.;Chen, L.J.;Liu, P.T.
貢獻者:	淡江大學物理學系
日期:	2005-06-01
上傳時間:	2011-10-24 10:48:23 (UTC+8)
摘要:	NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous Si/Ni/SiO2 structure at 900 degrees C. A pronounced capacitance-voltage hysteresis was observed with a memory window of I V under the 2 V programming voltage for the samples. For dry oxidation at 800 degrees C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices. (c) 2005 American Vacuum Society.
關聯:	J. Vac. Sci. Technol. A 23, pp.851-855
DOI:	10.1116/1.1913678
顯示於類別:	[物理學系暨研究所] 期刊論文

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