淡江大學機構典藏:Item 987654321/72654
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 62822/95882 (66%)
造访人次 : 4015041      在线人数 : 667
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧：
  • 您可在西文检索词汇前后加上"双引号"，以获取较精准的检索结果
  • 若欲以作者姓名搜寻，建议至进阶搜寻限定作者字段，可获得较完整数据
    •  进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/72654


    题名: Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
    作者: Yeh, P.H.;Wu, H.H.;Yu, C.H.;Chen, L.J.;Liu, P.T.
    贡献者: 淡江大學物理學系
    日期: 2005-06-01
    上传时间: 2011-10-24 10:48:23 (UTC+8)
    摘要: NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous Si/Ni/SiO2 structure at 900 degrees C. A pronounced capacitance-voltage hysteresis was observed with a memory window of I V under the 2 V programming voltage for the samples. For dry oxidation at 800 degrees C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices. (c) 2005 American Vacuum Society.
    關聯: J. Vac. Sci. Technol. A 23, pp.851-855
    DOI: 10.1116/1.1913678
    显示于类别:[物理學系暨研究所] 期刊論文

    文件中的档案:

    档案 描述 大小格式浏览次数
    Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si Ni SiO2 structure.pdf773KbAdobe PDF1检视/开启
    index.html0KbHTML29检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈