English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 51756/86971 (60%)
造訪人次 : 8358324      線上人數 : 80
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋
    請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72654

    題名: Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure
    作者: Yeh, P.H.;Wu, H.H.;Yu, C.H.;Chen, L.J.;Liu, P.T.
    貢獻者: 淡江大學物理學系
    日期: 2005-06-01
    上傳時間: 2011-10-24 10:48:23 (UTC+8)
    摘要: NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous Si/Ni/SiO2 structure at 900 degrees C. A pronounced capacitance-voltage hysteresis was observed with a memory window of I V under the 2 V programming voltage for the samples. For dry oxidation at 800 degrees C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices. (c) 2005 American Vacuum Society.
    關聯: J. Vac. Sci. Technol. A 23, pp.851-855
    DOI: 10.1116/1.1913678
    顯示於類別:[物理學系暨研究所] 期刊論文





    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回饋