Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties

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Title:	Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
Authors:	Huang, C. T.;Hsin, C. L.;Huang, K. W.;Lee, C. Y.;Yeh, P. H.;Chen, U. S.;Chen, L. J.
Contributors:	淡江大學物理學系
Keywords:	electrical resistivity;electron field emission;elemental semiconductors;erbium;nanowires;photoluminescence;semiconductor growth;semiconductor quantum wires;silicon;vapour deposition
Date:	2007-08
Issue Date:	2013-05-31 11:31:42 (UTC+8)
Publisher:	College Park: American Institute of Physics
Abstract:	Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3∙6H2O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5×10−2 Ω cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.
Relation:	Applied Physics Letters 91(9), 093133(3 pages)
DOI:	10.1063/1.2777181
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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