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    Title: Er-doped silicon nanowires with 1.54 μm light-emitting and enhanced electrical and field emission properties
    Authors: Huang, C. T.;Hsin, C. L.;Huang, K. W.;Lee, C. Y.;Yeh, P. H.;Chen, U. S.;Chen, L. J.
    Contributors: 淡江大學物理學系
    Keywords: electrical resistivity;electron field emission;elemental semiconductors;erbium;nanowires;photoluminescence;semiconductor growth;semiconductor quantum wires;silicon;vapour deposition
    Date: 2007-08
    Issue Date: 2013-05-31 11:31:42 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: Erbium-doped silicon nanowires have been grown via a vapor transport and condensation method with ErCl3∙6H2O powder as part of the source in one step. The Er-doped silicon nanowires exhibit the room temperature photoluminescence at a wavelength of 1.54 μm, ideal for optical communication. From I-V measurements, the resistivity of 4.2 at. % Er-doped Si nanowires was determined to be 1.5×10−2 Ω cm. The Er-doped silicon nanowires were found to possess excellent field emission properties with a field enhancement factor as high as 1260. The rich variety of enhanced physical properties exhibited by the Er-doped silicon nanowires points to versatile applications for advanced devices.
    Relation: Applied Physics Letters 91(9), 093133(3 pages)
    DOI: 10.1063/1.2777181
    Appears in Collections:[物理學系暨研究所] 期刊論文

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