Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy

doi:10.1063/1.2207836

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72628

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题名:	Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
作者:	Pao, C. W.;Babu, P. D.;Tsai, H. M.;Chiou, J. W.;Ray, S. C.;Yang, S. C.;Chien, F. Z.;Pong, W. F.;Tsai, M.-H.;Hsu, C. W.;Chen, L. C.;Chen, C. C.;Chen, K. H.;Lin, H.-J.;Lee, J. F.;Guo, J. H.
贡献者:	淡江大學物理學系
关键词:	nanostructured materials;X-ray absorption;X-ray emission spectra;Raman spectra;XANES;aluminium compounds;gallium compounds;indium compounds;III-V semiconductors;wide band gap semiconductors;conduction bands;energy gap
日期:	2006-05
上传时间:	2013-05-31 11:32:45 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	Nitrogen (N) and metal (Al, Ga, and In) K-edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III–nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.
關聯:	Applied Physics Letters 88(22), pp.223113(3pages)
DOI:	10.1063/1.2207836
显示于类别:	[物理學系暨研究所] 期刊論文

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