淡江大學機構典藏:Item 987654321/72628
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/72628


    Title: Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
    Authors: Pao, C. W.;Babu, P. D.;Tsai, H. M.;Chiou, J. W.;Ray, S. C.;Yang, S. C.;Chien, F. Z.;Pong, W. F.;Tsai, M.-H.;Hsu, C. W.;Chen, L. C.;Chen, C. C.;Chen, K. H.;Lin, H.-J.;Lee, J. F.;Guo, J. H.
    Contributors: 淡江大學物理學系
    Keywords: nanostructured materials;X-ray absorption;X-ray emission spectra;Raman spectra;XANES;aluminium compounds;gallium compounds;indium compounds;III-V semiconductors;wide band gap semiconductors;conduction bands;energy gap
    Date: 2006-05
    Issue Date: 2013-05-31 11:32:45 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: Nitrogen (N) and metal (Al, Ga, and In) K-edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III–nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.
    Relation: Applied Physics Letters 88(22), pp.223113(3pages)
    DOI: 10.1063/1.2207836
    Appears in Collections:[Graduate Institute & Department of Physics] Journal Article

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