Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72621

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题名:	Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy
作者:	Jan, J. C.;Asokan, K.;Chiou, J. W.;Pong, W. F.;Tseng, P. K.;Tsai, M.-H.;Chang, Y. K.;Chen, Y. Y.;Lee, J. F.;Wu, J. S.;Lin, H.-J.;Chen, C. T.;Chen, L. C.;Chen, F. R.;Ho, J.-K.
贡献者:	淡江大學物理學系
关键词:	gallium compounds;III-V semiconductors;semiconductor-metal boundaries;nickel;gold;interface states;X-ray absorption spectra;oxidation;annealing;interface structure;bond lengths;hole density;contact resistance
日期:	2001-04
上传时间:	2013-05-31 11:32:26 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	X-ray absorption spectroscopy has been used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts on p-GaN. The Ni K-, L2,3-, and O K-edges x-ray absorption spectra clearly show the formation of NiO in the annealed contacts. Annealing in air increases Ni-site hole concentration and slightly shortens the nearest-neighbor Ni–O bond length, which enhances p–d hybridization and charge transfer from Ni to O. The observed very low specific contact resistance in the oxidized contacts is found to be due to the enhanced hole concentration at the Ni site.
關聯:	Applied Physics Letters 78(18), pp.2718-2720
DOI:	10.1063/1.1370121
显示于类别:	[物理學系暨研究所] 期刊論文

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