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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/72621

    Title: Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy
    Authors: Jan, J. C.;Asokan, K.;Chiou, J. W.;Pong, W. F.;Tseng, P. K.;Tsai, M.-H.;Chang, Y. K.;Chen, Y. Y.;Lee, J. F.;Wu, J. S.;Lin, H.-J.;Chen, C. T.;Chen, L. C.;Chen, F. R.;Ho, J.-K.
    Contributors: 淡江大學物理學系
    Keywords: gallium compounds;III-V semiconductors;semiconductor-metal boundaries;nickel;gold;interface states;X-ray absorption spectra;oxidation;annealing;interface structure;bond lengths;hole density;contact resistance
    Date: 2001-04
    Issue Date: 2013-05-31 11:32:26 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: X-ray absorption spectroscopy has been used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts on p-GaN. The Ni K-, L2,3-, and O K-edges x-ray absorption spectra clearly show the formation of NiO in the annealed contacts. Annealing in air increases Ni-site hole concentration and slightly shortens the nearest-neighbor Ni–O bond length, which enhances p–d hybridization and charge transfer from Ni to O. The observed very low specific contact resistance in the oxidized contacts is found to be due to the enhanced hole concentration at the Ni site.
    Relation: Applied Physics Letters 78(18), pp.2718-2720
    DOI: 10.1063/1.1370121
    Appears in Collections:[物理學系暨研究所] 期刊論文

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