Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72613

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/72613

题名:	Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study
作者:	Chang, Y. D.;Chiu, A. P.;Pong, W. F.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Chiou, J. W.;Jan, C. J.;Tseng, P. K.;Wu, R. T.;Chung, S. C.;Tsang, K. L.;Lin, I. N.;Cheng, H. F.
贡献者:	淡江大學物理學系
日期:	2000-12
上传时间:	2013-05-31 11:32:40 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	X-ray absorption near-edge structure (XANES) measurements have been performed for nitrogen (N) containing diamond films with three different N concentrations at the C K-edge using the sample drain current mode. The C K-edge XANES spectra of these diamond films resemble that of the pure diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp2- and sp3-bond derived resonance features in the XANES spectra. The valence-band photoelectron spectra indicate that N atoms cause the broadening of the valence band σ- and π-bond features and the enhancement and reduction of the σ- and π-bond features, respectively.
關聯:	Applied Physics Letters 77(26), pp.4362-4364
DOI:	10.1063/1.1334916
显示于类别:	[物理學系暨研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
1.1334916.pdf		234Kb	Adobe PDF	349	检视/开启
index.html		0Kb	HTML	369	检视/开启

在機構典藏中所有的数据项都受到原著作权保护.

TAIR相关文章