Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study

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Title:	Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study
Authors:	Chang, Y. D.;Chiu, A. P.;Pong, W. F.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Chiou, J. W.;Jan, C. J.;Tseng, P. K.;Wu, R. T.;Chung, S. C.;Tsang, K. L.;Lin, I. N.;Cheng, H. F.
Contributors:	淡江大學物理學系
Date:	2000-12
Issue Date:	2013-05-31 11:32:40 (UTC+8)
Publisher:	College Park: American Institute of Physics
Abstract:	X-ray absorption near-edge structure (XANES) measurements have been performed for nitrogen (N) containing diamond films with three different N concentrations at the C K-edge using the sample drain current mode. The C K-edge XANES spectra of these diamond films resemble that of the pure diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp2- and sp3-bond derived resonance features in the XANES spectra. The valence-band photoelectron spectra indicate that N atoms cause the broadening of the valence band σ- and π-bond features and the enhancement and reduction of the σ- and π-bond features, respectively.
Relation:	Applied Physics Letters 77(26), pp.4362-4364
DOI:	10.1063/1.1334916
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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