Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy

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Title:	Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy
Authors:	Tsai, H. M.;Jan, J. C.;Chiou, J. W.;Pong, W. F.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Yang, Y. W.;Lai, L. J.;Wu, J. J.;Wu, C. T.;Chen, K. H.;Chen, L. C.
Contributors:	淡江大學物理學系
Keywords:	silicon compounds;sputtered coatings;XANES;noncrystalline structure;electronic structure;bonds (chemical);Young's modulus
Date:	2001-10
Issue Date:	2013-05-31 11:31:54 (UTC+8)
Publisher:	College Park: American Institute of Physics
Abstract:	X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π∗ peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young’s modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.
Relation:	Applied Physics Letters 79(15), pp.2393-2395
DOI:	10.1063/1.1409275
Appears in Collections:	[Graduate Institute & Department of Physics] Journal Article

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