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    Title: Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy
    Authors: Tsai, H. M.;Jan, J. C.;Chiou, J. W.;Pong, W. F.;Tsai, M. H.;Chang, Y. K.;Chen, Y. Y.;Yang, Y. W.;Lai, L. J.;Wu, J. J.;Wu, C. T.;Chen, K. H.;Chen, L. C.
    Contributors: 淡江大學物理學系
    Keywords: silicon compounds;sputtered coatings;XANES;noncrystalline structure;electronic structure;bonds (chemical);Young's modulus
    Date: 2001-10
    Issue Date: 2013-05-31 11:31:54 (UTC+8)
    Publisher: College Park: American Institute of Physics
    Abstract: X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π∗ peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young’s modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride.
    Relation: Applied Physics Letters 79(15), pp.2393-2395
    DOI: 10.1063/1.1409275
    Appears in Collections:[物理學系暨研究所] 期刊論文

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