Electronic and atomic structures of quasi-one-dimensional K0.3MoO3

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72607

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題名:	Electronic and atomic structures of quasi-one-dimensional K0.3MoO3
作者:	Huang, C. H.;Jan, J. C.;Chiou, J. W.;Tsai, H. M.;Pao, C. W.;Du, C. H.;Pong, W. F.;Tsai, M. H.;Tang, M. T.;Lee, J. J.;Lee, J. F.
貢獻者:	淡江大學物理學系
關鍵詞:	electronic structure;atomic structure;X-ray absorption;semiconductor devices;dynamic testing
日期:	2005-04
上傳時間:	2013-05-31 11:32:03 (UTC+8)
出版者:	College Park: American Institute of Physics
摘要:	The electronic and atomic structures of quasi-one-dimensional blue bronze K0.3MoO3 were investigated by polarization-dependent O K-edge x-ray absorption near-edge structure (XANES) and Mo K-edge extended x-ray absorption fine structure (EXAFS) measurements at various temperature and applied voltages. The O K-edge XANES spectra suggest that the number of unoccupied O 2p–Mo 4d hybridized states increases and decreases with temperature, respectively, below and above a critical temperature of 180 K. The along b-axis electric current measurements show a threshold applied voltage, beyond which the current increases rapidly. The Mo K-edge EXAFS measurements show that the Mo–O bond lengths are insensitive to the temperature even beyond 180 K.
關聯:	Applied Physics Letters 86(14), 141905(3pages)
DOI:	10.1063/1.1897437
顯示於類別:	[物理學系暨研究所] 期刊論文

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