淡江大學機構典藏:Item 987654321/72597
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    题名: Theory for Slightly Doped Antiferromagnetic Mott Insulators
    作者: Lee, T.-K.;Ho, Chang-ming;Nagaosa, Naoto;Lee, Wei-Cheng
    贡献者: 淡江大學物理學系
    日期: 2003-05
    上传时间: 2013-07-09 15:09:23 (UTC+8)
    出版者: New York: Springer New York LLC
    摘要: New trial wave functions, constructed explicitly from the unique Mott insulating state with antiferromagnetic order, are proposed to describe the ground state of a Mott insulator slightly doped with holes or electrons. A rigid band is observed as charged quasiparticles with well-defined momenta being realized in these states. These states have much less superconducting correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high T(c) cuprates doped lightly with holes or electrons.
    關聯: Journal of Low Temperature Physics 131(3-4), pp.169-179
    DOI: 10.1023/A:1022904531026
    显示于类别:[物理學系暨研究所] 期刊論文

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