Electronic and bonding properties of Fe- and Ni based hydrogenated amorphous carbon thin films by X-ray absorption, valence-band photoemission and Raman spectroscopy

淡江大學機構典藏 > 理學院 > 物理學系暨研究所 > 期刊論文 > Item 987654321/72574

請使用永久網址來引用或連結此文件: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/72574

題名:	Electronic and bonding properties of Fe- and Ni based hydrogenated amorphous carbon thin films by X-ray absorption, valence-band photoemission and Raman spectroscopy
作者:	Ray, S. C.;Tsai, H. M.;Pao, C. W.;Chang, W. H.;Pong, W. F.;Chiou, J. W.;Tsai, M.-H.
貢獻者:	淡江大學物理學系
關鍵詞:	M-doped DLC;XANES;VB PES
日期:	2011-07
上傳時間:	2011-10-24 10:34:10 (UTC+8)
出版者:	Lausanne: Elsevier S.A.
摘要:	Electronic and bonding properties of Me-based hydrogenated amorphous carbon (a-CH:Me, Me = Fe, Ni) thin films have been studied by X-ray absorption near-edge structure (XANES), valence-band photoemission (VB-PES) and Raman spectroscopy. Raman and XANES results show enhancement of the content of sp3-rich diamond-like carbon (DLC) by doping with Fe and Ni. The VB-PES spectrum of a-CH:Fe shows emergence of a prominent feature due to states of sp3-bonded clusters, indicating that a-CH:Fe induced enhancement of DLC structure. The nano-indentation measurement reveals that a-CH:Fe has a greatly enhanced hardness, while electrical resistance measurement shows that a-CH:Me reduces resistivity.
關聯:	Diamond and Related Materials 20(7), pp.886–890
DOI:	10.1016/j.diamond.2011.03.041
顯示於類別:	[物理學系暨研究所] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	394	檢視/開啟
index.html		0Kb	HTML	68	檢視/開啟

在機構典藏中所有的資料項目都受到原著作權保護.

TAIR相關文章