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    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72574

    题名: Electronic and bonding properties of Fe- and Ni based hydrogenated amorphous carbon thin films by X-ray absorption, valence-band photoemission and Raman spectroscopy
    作者: Ray, S. C.;Tsai, H. M.;Pao, C. W.;Chang, W. H.;Pong, W. F.;Chiou, J. W.;Tsai, M.-H.
    贡献者: 淡江大學物理學系
    关键词: M-doped DLC;XANES;VB PES
    日期: 2011-07
    上传时间: 2011-10-24 10:34:10 (UTC+8)
    出版者: Lausanne: Elsevier S.A.
    摘要: Electronic and bonding properties of Me-based hydrogenated amorphous carbon (a-CH:Me, Me = Fe, Ni) thin films have been studied by X-ray absorption near-edge structure (XANES), valence-band photoemission (VB-PES) and Raman spectroscopy. Raman and XANES results show enhancement of the content of sp3-rich diamond-like carbon (DLC) by doping with Fe and Ni. The VB-PES spectrum of a-CH:Fe shows emergence of a prominent feature due to states of sp3-bonded clusters, indicating that a-CH:Fe induced enhancement of DLC structure. The nano-indentation measurement reveals that a-CH:Fe has a greatly enhanced hardness, while electrical resistance measurement shows that a-CH:Me reduces resistivity.
    關聯: Diamond and Related Materials 20(7), pp.886–890
    DOI: 10.1016/j.diamond.2011.03.041
    显示于类别:[物理學系暨研究所] 期刊論文


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