淡江大學機構典藏:Item 987654321/71748
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    Please use this identifier to cite or link to this item: https://tkuir.lib.tku.edu.tw/dspace/handle/987654321/71748


    Title: A study of copper chemical mechanical polishing in urea–hydrogen peroxide slurry by electrochemical impedance spectroscopy
    Authors: Tsai, Tzu-hsuan;Wu, Yung-fu;Yen, Shi-chern
    Contributors: 淡江大學化學工程與材料工程學系
    Keywords: Copper;Chemical mechanical polishing;Urea-hydrogen peroxide slurry;Electrochemical impedance spectroscopy;Potentiodynamic curve
    Date: 2003-05
    Issue Date: 2013-05-31 11:39:51 (UTC+8)
    Publisher: Amsterdam: Elsevier BV * North-Holland
    Abstract: The electrochemical impedance spectroscopy (EIS) technique has been used to investigate the feasibility of urea–hydrogen peroxide (urea–H2O2) slurries in copper chemical mechanical polishing (Cu CMP). The performance of the inhibiting-type and the chelating-type additives, BTA and NH4OH, were also explored. In order to analyze the surface-reaction characteristics of Cu, the equivalent circuit of double capacitor mode was mainly used to simulate the corrosion behaviors of Cu CMP in various slurries. In addition, via measuring dc potentiodynamic curves and open circuit potential (OCP), the corrosion characteristics were obtained in various slurries. Both EIS and AFM experimental results indicate that the slurry composed of 5 wt.% urea–H2O2+0.1 wt.% BTA+1 wt.% NH4OH can achieve the better Cu CMP performance. Its rms-roughness (Rq) after CMP and the removal rate (RR) attain to 2.636 nm and 552.49 nm/min, respectively.
    Relation: Applied Surface Science 214(1-4), pp.120-135
    DOI: 10.1016/S0169-4332(03)00272-1
    Appears in Collections:[Graduate Institute & Department of Chemical and Materials Engineering] Journal Article

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