New Power Gating Structure with Low Voltage Fluctuations by Bulk Controller in Transition Mode

淡江大學機構典藏 > 工學院 > 電機工程學系暨研究所 > 會議論文 > Item 987654321/70496

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题名:	New Power Gating Structure with Low Voltage Fluctuations by Bulk Controller in Transition Mode
作者:	Chang, Chung-yu;Yang, Wei-ben;Huang, Ching-ji;Chien, Cheng-hsing
贡献者:	淡江大學電機工程學系
日期:	2007-05
上传时间:	2011-10-23 21:21:45 (UTC+8)
摘要:	System-on-a-chip with multiple power domains reduces leakage power consumption by power gating which shut off the idle blocks. Power gating is an effective technology to reduce sub-threshold leakage current. However, without good understanding and careful design, negative effects of power gating may overwhelm the potential gain and make the technique not worth the effort. For example, power gating may cause instantaneous current when sleep transistors are turned on. And instantaneous current will lead to VDD voltage drop, ground bounce, and inductive noise in power supply line. To reduce the ground bounce, we proposed new power gating structures with added bulk controller when sleep transistors are turned on. Simulation results show that the maximum voltage fluctuations for our power gating structures are smaller than those for the other power gating structures. Our power gating structures reduce the instantaneous current and voltage fluctuations in the power supply line.
關聯:	2007 IEEE International Symposium on Circuits and Systems(ISCAS 2007), pp.3740 - 3743
DOI:	10.1109/ISCAS.2007.378656
显示于类别:	[電機工程學系暨研究所] 會議論文

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