English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 58323/91876 (63%)
造访人次 : 14088967      在线人数 : 66
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library & TKU Library IR team.
搜寻范围 查询小技巧:
  • 您可在西文检索词汇前后加上"双引号",以获取较精准的检索结果
  • 若欲以作者姓名搜寻,建议至进阶搜寻限定作者字段,可获得较完整数据
  • 进阶搜寻


    jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/65328


    题名: Investigation of Thermo-Chemical Polishing of CVD Diamond Film
    作者: Chao, C.L.;Chien, H.H.;Ma, K.J.;Lin, H.Y.
    贡献者: 淡江大學機械與機電工程學系
    关键词: Chemical Vapor Deposition (CVD);Diamond Film;Thermo-Chemical Polishing
    日期: 2007-01
    上传时间: 2011-10-20 21:40:46 (UTC+8)
    摘要: ZnO/Diamond structure has attracted a lot of attentions and heavy investment recently just because diamond has the capability of producing very high surface acoustic wave (around 10,000m/s). In this present study, the microwave chemical vapor deposition (CVD) method was employed to produce diamond films on silicon single crystal. Thermo-chemical polishing experiments were then conducted on the obtained diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were also investigated. Thermo-chemical polishing was proved to be able to remove the diamond film very effectively (4.8μm deep of diamond film was removed in 30 minutes when polishing at 550oC and 5.7m/s). The material removal rate was increased with polishing speed and pressure. Higher polishing temperature would improve the chemical reaction and result in better surface finish.
    關聯: Key Engineering Materials 329, pp.195-200
    DOI: 10.4028/www.scientific.net/KEM.329.195
    显示于类别:[機械與機電工程學系暨研究所] 期刊論文

    文件中的档案:

    档案 大小格式浏览次数
    index.html0KbHTML91检视/开启

    在機構典藏中所有的数据项都受到原著作权保护.

    TAIR相关文章

    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library & TKU Library IR teams. Copyright ©   - 回馈