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    Please use this identifier to cite or link to this item: http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/65326

    Title: Investigation of Material Removal Mechanisms Involved in ICP Etching of InGaN/GaN
    Other Titles: 感應耦合電漿蝕刻InGaN/GaN材料移除機制研究
    Authors: 趙崇禮;周文成;石正宜;馬廣仁;陳大同
    Contributors: 淡江大學機械與機電工程學系
    Keywords: 感應耦合電漿蝕刻;材料移除機制;ICP etching;InGaN/GaN;Material removal mechanisms
    Date: 2006-05
    Issue Date: 2013-07-11 11:55:15 (UTC+8)
    Publisher: 桃園縣:國防大學理工學院
    Abstract: The chemical inertness and high bond strength of GaN material do not permit a simple wet etch process for pattern transfer in fabrication of devices. It has been demonstrated inductively coupled plasma could significantly improve etching process producing a highly anisotropic etch profiles and high etch rate. Etching of InGaN/GaN multiple quantum wells (MQWs) materials was performed using inductively coupled Cl2/Ar plasmas, and the effects of main process parameters such as gas flow rate, induction rf power, self bias voltage, chamber pressure on the etching mechanisms and their relations to the etch rates and morphologies of InGaN/GaN materials was investigated. InGaN/GaN etch rates increased with the increase of chlorine radical density and ion energy, and a vertical etch profile having an etch rate over 450 nm/min could be obtained at 350 W induction power and -400 V bias voltage. The etch rate of InGaN/GaN MQWs appeared to be more affected by the chemical reaction between Cl radicals and GaN compared to the physical sputtering itself.
    Relation: 中正嶺學報=Journal of Chung Cheng Institute of Technology 34(2),頁185-190
    Appears in Collections:[Graduate Institute & Department of Mechanical and Electro-Mechanical Engineering] Journal Article

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